v rrm = 150 v - 200 v i f(av) = 200 a features ? high surge capability twin tower package ? not esd sensitive parameter symbol mbr200150ct(r) unit repetitive peak reverse voltage v rrm 150 v rms reverse voltage v rms 106 v ? types from 150 v to 200 v v rrm mbr200150ct thru MBR200200CTR 200 141 mbr200200ct(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode conditions dc blocking voltage v dc 150 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol mbr200150ct(r) unit average forward current (per pkg) i f(av) 200 a maximum forward voltage (per leg) 0.88 3 10 50 thermal characteristics thermal resistance, junction-case (per leg) r jc 0.45 c/w t c = 125 c 200 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 1500 1500 50 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r v f v a t j = 100 c 10 t j = 25 c i fm = 100 a, t j = 25 c conditions -55 to 150 3 mbr200200ct(r) 0.45 t j = 150 c 0.92 ma -55 to 150 200 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbr200150ct thru MBR200200CTR www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbr200150ct thru MBR200200CTR www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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